Watch these video tutorials to learn about pattern roughness, MetroLER and the technology behind its revolutionary capabilities.

Introducing MetroLER:

Part 1:  Why MetroLER is needed

Part 2:  Why measuring 3σ is not good enough

Part 3:  Detecting Edges with the Fractilia Inverse Linescan Model (FILM)

Part 4:  Subtracting SEM errors

Part 5:  Predicting the impacts of roughness


BKM's and Technical Information

imec Roughness Measurement Protocol

Line/Space Roughness Measurement Data Collection BKM

System Requirements for Running MetroLER

Running MetroLER on Multiple Cores


Read these papers and presentations for more technical details on pattern roughness and MetroLER.

Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch  (EUVL Symposium 2018)
Angelique Raley, et al.

Unbiased roughness measurements: subtracting out SEM effects, part 2 (EIPBN 2018)
Gian F. Lorusso, Vito Rutigliani, Frieda Van Roey, Chris A. Mack

The need for LWR/LER metrology standardization: The imec roughness protocol (SPIE 2018)
Gian F. Lorusso, et al.

Unbiased roughness measurements: the key to better etch performance (SPIE 2018)  Paper  Presentation
Andrew Liang, et al.

Setting up a proper Power Spectral Density (PSD) and Autocorrelation Analysis for Material and Process Characterization (SPIE 2018)
Vito Rutigliani, et al.

Roughness power spectral density as a function of resist parameters and its impact through process (SPIE 2018)
Charlotte Cutler, et al.

Unbiased roughness measurements: subtracting out SEM effects (MNE 2017)
Gian F. Lorusso, Vito Rutigliani, Frieda Van Roey, Chris A. Mack

Reducing roughness in EUV lithography (EUVL Symposium 2017)
Chris A. Mack

More on stochastics and the phenomenon of line-edge roughness (Photopolymer 2017)
Chris A. Mack

Stochastics and the phenomenon of line-edge roughness (SPIE 2017)
Chris A. Mack

Using the analytical linescan model for SEM metrology (SPIE 2017)
Chris A. Mack, Benjamin D. Bunday

Global minimization line-edge roughness analysis of top down SEM images (SPIE 2017)
Barton G. Lane, Chris A. Mack, Nasim Eibagi, Peter Ventzekn

Level crossing methodology applied to line-edge roughness characterization (SPIE 2017)
Chris A. Mack, Timothy A. Brunner, Xuemei Chen, Lei Sun

Impact of stochastic process variations on overlay mark fidelity towards the 5nm node (SPIE 2017)
Michael E. Adel,  Roel Gronheid, Chris A. Mack, et al.


Additional Resources

More than two dozen published papers covering LER and related topics are available on Chris Mack's website.